Theoretical Study on Valence Band Structure of Strained Wurtzite GaN/AlN Quantum Well with Different Crystal Orientations

Liu Ya-qun; Li Xi-yue; Zhang Gary

doi:10.12052/gdutxb.220158

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Theoretical Study on Valence Band Structure of Strained Wurtzite GaN/AlN Quantum Well with Different Crystal Orientations

更新时间：2026-05-27

- Theoretical Study on Valence Band Structure of Strained Wurtzite GaN/AlN Quantum Well with Different Crystal Orientations
- Vol. 41, Issue 1, Pages: 119-126(2024)
- 作者机构：
  
  1. 广东工业大学信息工程学院,广东,广州,510006
  2. 广东工业大学集成电路学院,广东,广州,510006
- 作者简介：
- 基金信息：
- DOI：10.12052/gdutxb.220158
  CLC： TN301
- Online First：25 January 2024，
  
  Published：2024
- 稿件说明：
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刘亚群, 李希越, 章国豪. 不同晶面应变纤锌矿GaN/AlN量子阱的价带结构理论研究[J]. 广东工业大学学报, 2024, 41(1): 119-126.

Liu Ya-qun, Li Xi-yue, Zhang Gary. Theoretical Study on Valence Band Structure of Strained Wurtzite GaN/AlN Quantum Well with Different Crystal Orientations[J]. 2024, 41(1): 119-126.
刘亚群, 李希越, 章国豪. 不同晶面应变纤锌矿GaN/AlN量子阱的价带结构理论研究[J]. 广东工业大学学报, 2024, 41(1): 119-126. DOI： 10.12052/gdutxb.220158.

Liu Ya-qun, Li Xi-yue, Zhang Gary. Theoretical Study on Valence Band Structure of Strained Wurtzite GaN/AlN Quantum Well with Different Crystal Orientations[J]. 2024, 41(1): 119-126. DOI： 10.12052/gdutxb.220158.

摘要

为深刻理解应变异质结量子阱结构的物理性质，帮助改进基于宽禁带氮化物半导体器件的设计，本文基于六带应力相关的k·p哈密顿量与自洽薛定谔−泊松方程建立了在场约束效应下极性 (0001)、半极性 (

$10\bar 12 $

img text_id='Z-20230525091707' class='formula-img' style='display:none;' src='gdgydxxb-41-1-119_Z-20230525091707.jpg'>

) 及非极性 (

$10\bar 10 $

img text_id='Z-20230525091744' class='formula-img' style='display:none;' src='gdgydxxb-41-1-119_Z-20230525091744.jpg'>

) 晶面的纤锌矿GaN/AlN量子阱价带子带模型，并给出了不同晶面GaN/AlN量子阱在双轴和单轴应力作用下的子带能量色散关系。根据应力对量子阱价带结构的影响，对应力与空穴有效质量之间的微观物理关系进行了综合研究。结果表明，价带结构对晶体取向的改变有很大的依赖性。双轴应力对有效质量的改善效果不大，然而单轴压缩应力通过降低垂直沟道方向的能量使低有效质量区域获得更多的空穴，从而有效降低空穴有效质量，且在不同晶面的结构中都减少了约90%。

Abstract

In order to deeply understand the physical properties of strained heterojunction quantum well structures and improve the design of wide-bandgap nitride semiconductor devices

in t

his paper

based on the six-band stress-dependent k·p Hamiltonian and the self-consistent Schrodinger-Poisson equation

the valence subband model of wurtzite GaN/AlN quantum well with polar (0001)

semi-polar (

$10\bar 12 $

img text_id='Z-20230525091841' class='formula-img' style='display:none;' src='gdgydxxb-41-1-119_Z-20230525091841.jpg'>

) and non-polar (

$10\bar 10 $

img text_id='Z-20230525091824' class='formula-img' style='display:none;' src='gdgydxxb-41-1-119_Z-20230525091824.jpg'>

) orientations under field confinement was established. The subband energy dispersion relations between GaN/AlN quantum well with different crystal orientations under biaxial and uniaxial stresses were also given. According to the influence of stress on the valence band structure of quantum well

the microcosmic physical relationship between stress and hole effective mass was studied comprehensively. The results show that the valence band structure heavily depends on the modification in crystal orientation. The biaxial stress has little effect on the improvement of effective mass. However

uniaxial compressive stress can obtain more holes in the region of low effective mass by reducing the energy in the vertical channel direction

such that the hole effective mass can be effectively reduced. And it is reduced by about 90% in the structure of different crystal orientations.

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