A GaN Low Noise Amplifier for 5G Millimeter Wave Band n257             and n258 Applications

Zhang Yao; Zhang Zhi-hao; Zhang Guo-hao

doi:10.12052/gdutxb.210049

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A GaN Low Noise Amplifier for 5G Millimeter Wave Band n257 and n258 Applications

更新时间：2026-05-27

- A GaN Low Noise Amplifier for 5G Millimeter Wave Band n257 and n258 Applications
- Vol. 39, Issue 6, Pages: 68-72(2022)
- 作者机构：
  
  1. 广东工业大学信息工程学院,广东,广州,510006
  2. 河源广工大协同创新研究院,广东,河源,517000
- 作者简介：
- 基金信息：
- DOI：10.12052/gdutxb.210049
  CLC： TN492
- Published：2022
- 稿件说明：
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张耀, 张志浩, 章国豪. 兼容5G毫米波n257和n258频段的氮化镓低噪声放大器设计研究[J]. 广东工业大学学报, 2022, 39(6): 68-72.

Zhang Yao, Zhang Zhi-hao, Zhang Guo-hao. A GaN Low Noise Amplifier for 5G Millimeter Wave Band n257 and n258 Applications[J]. 2022, 39(6): 68-72.
张耀, 张志浩, 章国豪. 兼容5G毫米波n257和n258频段的氮化镓低噪声放大器设计研究[J]. 广东工业大学学报, 2022, 39(6): 68-72. DOI： 10.12052/gdutxb.210049.

Zhang Yao, Zhang Zhi-hao, Zhang Guo-hao. A GaN Low Noise Amplifier for 5G Millimeter Wave Band n257 and n258 Applications[J]. 2022, 39(6): 68-72. DOI： 10.12052/gdutxb.210049.

摘要

基于100 nm的氮化镓(Gallium Nitride

GaN) 高电子迁移率晶体管(High Electron Mobility Transistor

HEMT) 工艺设计了一款毫米波低噪声放大器(Low Noise Amplifier

LNA) 单片式微波集成电路(Monolithic Microwave Integrated Circuit

MMIC) 芯片。该款低噪声放大器采用三级级联的拓扑结构，对带宽、噪声和增益进行了联合优化设计。测试结果显示，工作频率范围覆盖24~30 GHz，可兼顾5G毫米波n257(26.5~29.5 GHz) 和n258(24.25~27.5 GHz) 频段，噪声系数可达到2.4~2.5 dB的水平，小信号增益在21.1~24.1 dB之间，输出1 dB功率压缩点大于14.4 dBm的水平。

Abstract

A millimeter wave low noise amplifier (LNA) fabricated in 100nm gallium nitride (GaN) high electron mobility transistor (HEMT) process is presented. With a three-stage cascade topology and an optimum concurrent design

this LNA

covering a frequency range from 24 to 30 GHz for 5G millimeter wave Band n257 and n258 applications

achieves low noise figure of 2.4~2.5 dB

small signal gain of 21.1~24.1 dB

and output 1 dB power compression point of greater than 14.4 dBm.

关键词

Keywords

references

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WANG M L, CHEN Y G, HU N. Research and development of a millimeter wave transceiver front end chip for 5G terminal application [J]. Journal of Microwaves, 2020, 36(4): 86-89.

ZHANG Z H, ZHOU Y, LI F C, et al . Analysis on the development status of 5G millimeter wave industry [J ] . Designing Techniques of Posts and Telecommunications, 2021(2): 37-41.

FERREYRA R A, SUZUKI A, KAZUMOTO T, et al . n++ GaN regrowth technique using pico-second laser ablation to form non-alloy ohmic contacts [J ] . IEEE Electron Device Letters, 2017, 38(8): 1079-1081.

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