Application and simulation of MOSFET and IGBT combined device in high-frequency SMPS

PENG Gang-yi; WU Jun-chang

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Application and simulation of MOSFET and IGBT combined device in high-frequency SMPS

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- Application and simulation of MOSFET and IGBT combined device in high-frequency SMPS
- Issue 1, Pages: 8-10(2006)
- 作者机构：
  
  1. 湖南大学电气与信息学院
  2. 湖南大学电气与信息学院湖南长沙410006
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN86
- Published：2006
- 稿件说明：
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[1]彭刚毅,吴军昌.MOSFET与IGBT组合器件在高频开关电源中的应用及仿真[J].湖南电力,2006(01):8-10.

PENG Gang-yi, WU Jun-chang. Application and simulation of MOSFET and IGBT combined device in high-frequency SMPS[J]. 2006, (1): 8-10.
[1]彭刚毅,吴军昌.MOSFET与IGBT组合器件在高频开关电源中的应用及仿真[J].湖南电力,2006(01):8-10. DOI：

PENG Gang-yi, WU Jun-chang. Application and simulation of MOSFET and IGBT combined device in high-frequency SMPS[J]. 2006, (1): 8-10. DOI：

摘要

介绍了MOSFET和IGBT的工作原理和特性

分析了它们的组合（并联）应用效果

并将之运用于DC-DC全桥变换器中;介绍了一款仿真软件S im p lorer

通过它来进行仿真研究

并对仿真结果进行分析。

Abstract

This paper introduces the work principle and characteristics of MOSFET and IGBT

analyzes the effect of their parallel connection

and uses the combined device in DC-DC full-bridge converter.A simulation soft named Simplorer is used for simulation study and the simulation result is analyzed.

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