Monte-Carlo Simulation of Photocurrents of Oligosilanes

Yang Yan-ting; Yan Yan-ming; Wu Fu-gen

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Monte-Carlo Simulation of Photocurrents of Oligosilanes

更新时间：2026-05-27

- Monte-Carlo Simulation of Photocurrents of Oligosilanes
- Vol. 25, Issue 4, Pages: 17-20(2008)
- 作者机构：
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- Online First：01 March 2008，
  
  Published：2008
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杨燕婷, 杨燕明, 吴福根. 硅烷齐聚物光电流的Monte-Carlo模拟[J]. 广东工业大学学报, 2008, 25(4): 17-20.

Yang Yan-ting, Yan Yan-ming, Wu Fu-gen. Monte-Carlo Simulation of Photocurrents of Oligosilanes[J]. 2008, 25(4): 17-20.
杨燕婷, 杨燕明, 吴福根. 硅烷齐聚物光电流的Monte-Carlo模拟[J]. 广东工业大学学报, 2008, 25(4): 17-20. DOI：

Yang Yan-ting, Yan Yan-ming, Wu Fu-gen. Monte-Carlo Simulation of Photocurrents of Oligosilanes[J]. 2008, 25(4): 17-20. DOI：

摘要

用Monte-Carlo方法模拟了层状结构硅烷齐聚物的光电流衰减实验曲线

对于含小于12个硅原子的齐聚物

在电场作用下光生空穴载流子沿齐聚物链漂移的模型下

模拟结果与实验数据基本吻合.说明空穴在层状结构的齐聚物迁移过程中

链间俘获是限制空穴传输的主要因素.

Abstract

Computer simulations of the curve of photocurrents with manifold oligosilane thin films is conducted

employing Monte-Carlo program.Considerint the hole is carried along the chain of oligosilane under the electric field while the number of the Si is less than 12

this paper got the wonderful curves

and the simulation result complies with the experimental data.The result indicates that the hole’s being captured by the hopping states between the oligosilane chains is the primary factor in holding ba...

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