Dielectric Properties of Nanocrystalline Ba(Zr0.2Ti0.8)O3 Thin Films Epitaxially Grown on（001） SrTiO3∶Nb Single Crystal Substrate

Yang Zhong-fu; Tang Xin-gui

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Dielectric Properties of Nanocrystalline Ba(Zr_0.2Ti_0.8)O₃ Thin Films Epitaxially Grown on（001） SrTiO3∶Nb Single Crystal Substrate

更新时间：2026-05-27

- Dielectric Properties of Nanocrystalline Ba(Zr_0.2Ti_0.8)O₃ Thin Films Epitaxially Grown on（001） SrTiO3∶Nb Single Crystal Substrate
- Vol. 25, Issue 1, Pages: 11-14(2008)
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- Published：2008
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杨中服, 唐新桂. 纳米晶Ba(Zr_0.2Ti_0.8)O₃薄膜的外延生长与介电特性[J]. 广东工业大学学报, 2008, 25(1): 11-14.

Yang Zhong-fu, Tang Xin-gui. Dielectric Properties of Nanocrystalline Ba(Zr_0.2Ti_0.8)O₃ Thin Films Epitaxially Grown on（001） SrTiO3∶Nb Single Crystal Substrate[J]. 2008, 25(1): 11-14.
杨中服, 唐新桂. 纳米晶Ba(Zr_0.2Ti_0.8)O₃薄膜的外延生长与介电特性[J]. 广东工业大学学报, 2008, 25(1): 11-14. DOI：

Yang Zhong-fu, Tang Xin-gui. Dielectric Properties of Nanocrystalline Ba(Zr_0.2Ti_0.8)O₃ Thin Films Epitaxially Grown on（001） SrTiO3∶Nb Single Crystal Substrate[J]. 2008, 25(1): 11-14. DOI：

摘要

用脉冲激光沉积工艺在半导体(001)SrTiO3∶ω(Nb)=1.0%单晶基片上

外延生长出Ba(Zr0.2Ti0.8)O3(简称BZT)介电薄膜.在650℃原位退火10 min

薄膜为(001)外延生长的晶粒.薄膜的晶化特征与表面形貌用薄膜X-ray衍射仪和原子力显微镜测量完成.BZT薄膜(002)峰的半峰宽只有0.72°

说明薄膜晶化良好;薄膜的平均晶粒为90 nm

表面均方根粗糙度为4.3 nm

说明薄膜表面平整.在室温、100 kHz和500 kV/cm条件下

BZT的最大介电常数和调谐百分率分别达到317和65%. 更多还原

Abstract

Highly oriented Ba(Zr0.2Ti0.8)O3 thin films are grown on(001) SrTiO3∶ω(Nb)=1.0 % single crystal substrates using pulsed laser deposition and the dielectric properties of the films are evaluated.The thin films are in situ annealed at 650 ℃ for 10 min.and the highly(001)-oriented BZT thin films are obtained.The structure and surface morphology of the films have been characterized by X-ray diffraction(XRD) and atomic force microscopy(AFM).XRD and AFM characterization reveal a good crystallinity:the...

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唐新桂,梁建烈,农亮勤,熊惠芳,陈王丽华. PLD法制备高介电调谐率的纳米晶BZT薄膜[J]. 电子元件与材料. 2007(01)

蒋力立,黄开胜,唐新桂,陈王丽华. 高度(100)取向的BST薄膜及其高介电调谐率[J]. 电子元件与材料. 2005(12)

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