High Voltage IGBT Module Transient Model When Considering Thermal Properties

ZHOU Fei; ZHAO Chengyong; XU Yanming; XU Jianzhong

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High Voltage IGBT Module Transient Model When Considering Thermal Properties

更新时间：2025-12-08

- High Voltage IGBT Module Transient Model When Considering Thermal Properties
- Vol. 42, Issue 7, Pages: 2215-2223(2016)
- 作者机构：
  
  1. 国网智能电网研究院
  2. 华北电力大学新能源电力系统国家重点实验室
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published Online：31 July 2016，
  
  Published：2016
- 稿件说明：
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ZHOU Fei, ZHAO Chengyong, XU Yanming, et al. High Voltage IGBT Module Transient Model When Considering Thermal Properties[J]. 2016, 42(7): 2215-2223.
DOI：

ZHOU Fei, ZHAO Chengyong, XU Yanming, et al. High Voltage IGBT Module Transient Model When Considering Thermal Properties[J]. 2016, 42(7): 2215-2223. DOI：

摘要

为准确描述高压柔性直流输电技术中绝缘栅双极型晶体管（IGBT）模块中IGBT与二极管的开关暂态、热学特性及其关系

提出了一种考虑热学特性的高压IGBT模块暂态模型。该模型包括IGBT模块暂态模型和热学特性模块

采用机理推导、电气等效等方法

无需提取器件底层参数和求解复杂半导体方程

大大减少了计算量。在PSCAD/EMTDC仿真平台搭建模型测试电路与SABER通用模型

与实验测量结果进行对比分析

以验证模型有效性。结果表明

所提出的模型不仅可以实现电路仿真中IGBT模块的各种运行状态

还可以在小步长下模拟其电压电流尖峰、拖尾电流、Miller平台、二极管反向恢复等开关暂态特性

并考虑了温度损耗等对器件参数的影响。因此

该模型可用于柔性直流输电系统仿真、电磁干扰和损耗分析及控制策略等方面的研究。

Abstract

We put forward a high voltage IGBT module transient model after considering thermal properties to describe the relationship and the transient and thermal properties of IGBT and diode in the technical field of flexible high voltage direct current transmission technology. The model includes a switching transient model of IGBT module and thermal properties of module. Based on the mechanism of derivation and electrical equivalent

there is no necessary to extract the underlying parameters of the device and solve complex semiconductor equations

greatly reducing the amount of calculation. The proposed model is implemented on the PSCAD/EMTDC platform and the general IGBT model in SABER

respectively

and the test results are used to verify the effectiveness of the model. The results show that the proposed model can not only achieve the different states of IGBT module in circuit simulation

but also simulate the voltage and current spikes

tail current

Miller platform and consider the thermal loss influence in device parameters. Therefore

the model can be applied in the simulation of the flexible HVDC transmission system and as a basis for studying the electromagnetic interference and loss analysis and control strategy.

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