EMP Damage Threshold of EtherCAT Equipment and Protection Method

ZHOU Yinghui; DU Mingxin; SHI Lihua

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EMP Damage Threshold of EtherCAT Equipment and Protection Method

更新时间：2025-12-08

- EMP Damage Threshold of EtherCAT Equipment and Protection Method
- Vol. 43, Issue 4, Pages: 1370-1377(2017)
- 作者机构：
  
  1. 解放军理工大学电磁环境效应与光电工程国家级重点实验室
  2. 西安爱邦电磁技术有限责任公司
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published Online：10 April 2017，
  
  Published：2017
- 稿件说明：
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ZHOU Yinghui, DU Mingxin, SHI Lihua. EMP Damage Threshold of EtherCAT Equipment and Protection Method[J]. 2017, 43(4): 1370-1377.
DOI：

ZHOU Yinghui, DU Mingxin, SHI Lihua. EMP Damage Threshold of EtherCAT Equipment and Protection Method[J]. 2017, 43(4): 1370-1377. DOI：

摘要

为了实现高空核电磁脉冲(HEMP)的有效防护

选取一款典型的以太网现场总线系统(EtherCAT)从站通信模块

对其进行HEMP传导注入试验。研究了该类装置对HEMP的敏感度及损伤累积效应影响

选取了适用于网络端口的防护器件

研究了其对HEMP的响应特性

并提出了端口防护方案。通过试验得出:被测端口对HEMP传导注入较为敏感

单次脉冲注入情况下的损毁阈值电压约为450.1V

10次脉冲注入情况下的损毁阈值电压约为273.5 V

脉冲次数对其具有明显的累积效应;该防护器件在单次脉冲注入时损毁阈值电压为9.67 k V

10次脉冲时的损毁阈值电压为8.97 kV;将该防护器件并联至受试模块注入端口后

受试端口可保证在注入3 kV HEMP电压峰值下网络系统仍不受损伤。研究结果表明

防护后的以太网从站通信模块的损毁阈值电压可提升至3 kV以上。

Abstract

In order to realize the effective protection of high-altitude electromagnetic pulse（HEMP）

a typical ethernet for control automation technology（Ether CAT） slave communication module is selected for HEMP conduction injection test. The sensitivity of this kind of device to HEMP and influence of multiple pulse accumulation effects are researched. Suitable protection devices for the network port are selected

and their response characteristics of HEMP are investigated. Then

a port protection scheme is proposed. Experimental results indicate that test port is sensitive to HEMP conduction injection. The damage threshold voltage of test port for HEMP is about 450.1 V with a signal pulse

and is about 273.5 V with 10 pulses. Obviously

pulse number has an accumulation effect. The damage threshold voltage of protection devices is about 9.67 k V with a signal pulse

and is about 8.97 k V with 10 pulses. When the protection device is connected in parallel to the test port

the Ether CAT system is still not damaged under the injection of 3 k V HEMP. The results show that the damage threshold of the Ether CAT slave communication module can be raised up to 3 k V.

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