Interface contact through pressure is the way for press-pack insulated gate bipolar transistor（IGBT） modules in smart grid to conduct heat dissipation.However

the junction temperature of the press-pack IGBT modules could be too high

leading to degradation of electrical properties and even impairing the reliability

because of poor interfacial contact and poor heat dissipation.To overcome the above problems

we developed a sinter-pack IGBT module using nanosilver paste by forming electrical contact with chip to replace pressure contact in press-pack module.Then

the sinter-pack module was characterized by die-shear strength

thermal resistance

and static characteristics to compare with press-pack IGBT module.According to the experimental results

the thermal resistance of sinter-pack IGBT module decreased by 15.8%.The static electricity test results are consistent with two types of modules

further proving the feasibility of sinter-pack IGBT modules.The shear strength is around 20 MPa

indicating a good bonding quality of large area of die（13.5 mm×13.5 mm） with nanosiver paste.It is concluded that nano silver paste employed in press-pack IGBT modules can not only significantly decrease the thermal resistance of press-pack IGBT modules

but also get an excellent static electricity.Thus

a sinter-pack module is expected to be operated in smart grid because of the higher conversion efficiency

power density

and reliability during operating at high voltage and current applications.