Experimental Study on Nonlinear Conduction Mechanism of Epoxy-based Nanocomposite with Low Content of Graphene Filler
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Experimental Study on Nonlinear Conduction Mechanism of Epoxy-based Nanocomposite with Low Content of Graphene Filler
Vol. 44, Issue 3, Pages: 812-820(2018)
作者机构:
西安交通大学电力设备电气绝缘国家重点实验室
作者简介:
基金信息:
DOI:
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Published Online:30 March 2018,
Published:2018
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LI He, WANG Chuang, LIU Lilan, et al. Experimental Study on Nonlinear Conduction Mechanism of Epoxy-based Nanocomposite with Low Content of Graphene Filler[J]. 2018, 44(3): 812-820.
DOI:
LI He, WANG Chuang, LIU Lilan, et al. Experimental Study on Nonlinear Conduction Mechanism of Epoxy-based Nanocomposite with Low Content of Graphene Filler[J]. 2018, 44(3): 812-820.DOI:
Experimental Study on Nonlinear Conduction Mechanism of Epoxy-based Nanocomposite with Low Content of Graphene Filler
In order to study the effects of conductive graphene fillers on the conductive mechanisms of epoxy-based materials
graphene/epoxy nanocomposites with different filler content were fabricated
and the conductive percolation threshold(1.35%) of graphene/epoxy systems were measured. Moreover
a DC conduction current measurement system was used for measuring the polarization current of neat epoxy and graphene/epoxy composites(0.3% of graphene filler) at different temperature(50
80 and 100 ℃) and under the electric field of 0.24
1
4.4 k V/mm. The results indicate that the decay rate of polarization current of both composites increases with the increase of temperature and electric field. The main conduction mechanism of both composites t
ransforms from ohmic conduction to space charge limited current(SCLC) conduction at a threshold of conduction current electric field(Ethi)
and the Ethi decreases with the increase of temperature. Moreover
the activation energy of conduction current density increases with the addition of graphene fillers
and the activation energy decreases with the increase of electric field. The conduction mechanisms of graphene/epoxy composites under high electric fields are influenced by SCLC and tunneling effect.