Structural Parameter Analysis and Optimization of Tri-post Insulator on UHVAC GIL

WU Zehua; WANG Haoran; TIAN Huidong; GUO Zihao; LIU Lilan; PENG Zongren

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Structural Parameter Analysis and Optimization of Tri-post Insulator on UHVAC GIL

更新时间：2025-12-08

- Structural Parameter Analysis and Optimization of Tri-post Insulator on UHVAC GIL
- Vol. 44, Issue 10, Pages: 3165-3173(2018)
- 作者机构：
  
  1. 西安交通大学电力设备电气绝缘国家重点实验室
  2. 中国电力科学研究院有限公司
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published Online：31 October 2018，
  
  Published：2018
- 稿件说明：
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WU Zehua, WANG Haoran, TIAN Huidong, et al. Structural Parameter Analysis and Optimization of Tri-post Insulator on UHVAC GIL[J]. 2018, 44(10): 3165-3173.
DOI：

WU Zehua, WANG Haoran, TIAN Huidong, et al. Structural Parameter Analysis and Optimization of Tri-post Insulator on UHVAC GIL[J]. 2018, 44(10): 3165-3173. DOI：

摘要

为优化1 100 kV GIL三支柱绝缘子结构

使用有限元软件COMSOL建立特高压三支柱绝缘子计算模型

对绝缘子整体电位分布与电场分布进行了计算。将特高压三支柱绝缘子表面切向场强、合成场强以及金属嵌件表面场强的最大值作为优化研究指标

由此探讨特高压三支柱绝缘子各部位关键结构参数对这3个电场指标的影响程度与规律

确定三支柱绝缘子的优化方向。通过对结构参数与影响规律进行分析

提出了特高压三支柱绝缘子的哑铃型结构。计算结果表明

哑铃型结构可以有效地将金属嵌件表面场强由14.7 kV/mm降低到10.6 kV/mm

而对其他关键部位场强没有较大影响。该结构有效地改善了特高压三支柱绝缘子金属嵌件表面的电场分布

使得特高压三支柱绝缘子的综合电性能得到了提高。

Abstract

To optimize the structure of tri-post insulator in 1 100 kV GIL

we used the finite element software COMSOL to establish a model of UHV AC tri-post insulator and calculate the potential and electric field distribution. The maximum value of tangential and total electric field of tri-post insulator surface as well as the electric field strength of metal insert surface were defined as optimization indexes. Thereby

according to the effect laws and degree concluded by researching the influences of the key structure parameters on indexes value

the optimization direction was obtained. By analyzing structure parameters and effect laws

a dumbbell structure of UHV AC tri-post insulator was proposed. The calculation results showed that

the maximum field value of metal insert surface was decreased by dumbbell structure from 14.7 k V/mm to 10.6 k V/mm

without affecting the electric field distribution of insulator surface significantly. This structure effectively improved the electric field distribution on the surface of the metal insert and improve the comprehensive electrical performances.

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