Review on High-power IGBT Module and Drive Circuit

YANG Yuan; WEN Yang; LI Guoyu

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Review on High-power IGBT Module and Drive Circuit

更新时间：2025-12-08

- Review on High-power IGBT Module and Drive Circuit
- Vol. 44, Issue 10, Pages: 3207-3220(2018)
- 作者机构：
  
  1. 西安理工大学自动化与信息工程学院
  2. 青岛地铁集团有限公司
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published Online：31 October 2018，
  
  Published：2018
- 稿件说明：
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YANG Yuan, WEN Yang, LI Guoyu. Review on High-power IGBT Module and Drive Circuit[J]. 2018, 44(10): 3207-3220.
DOI：

YANG Yuan, WEN Yang, LI Guoyu. Review on High-power IGBT Module and Drive Circuit[J]. 2018, 44(10): 3207-3220. DOI：

摘要

绝缘栅双极晶体管（IGBT）作为电力电子设备中的核心器件

其应用场合越来越广泛

例如机车牵引

高压直流输电。这不仅对IGBT模块的性能提出了更严苛的挑战

同时也对IGBT的驱动保护电路提出了更高的要求。首先介绍了高压IGBT模块最新技术成果和发展趋势。其次

根据控制方式

对现阶段IGBT驱动电路以及串并联技术进行了总结分类。详细分析了各类驱动电路的工作原理和优缺点

给出了相应驱动电路的典型开关波形图。最后

对IGBT驱动电路未来的发展方向进行了展望。

Abstract

As core device of power electronics equipment

insulated gate bipolar transistor（IGBT） is widely used in various applications

such as rail traction and high voltage direct current transmission. This not only gives more stringent challenge to the performance of high-power IGBT modules

but also puts forward higher requirements for the driving circuit of IGBT. Consequently

firstly

the latest technology and development trend of high-power IGBT is introduced in detail. Then

IGBT driver circuits and series-parallel technology are classified according to the control method. The operating principles

advantages and disadvantages of each type are analyzed and discussed in detail. Finally

outlook on subjects of future research is given.

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