Characteristics of Charge Carrier of Epoxy Resin Based Nanocomposites Filled With Graphene Oxide at High Temperatures
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Characteristics of Charge Carrier of Epoxy Resin Based Nanocomposites Filled With Graphene Oxide at High Temperatures
Vol. 44, Issue 12, Pages: 3814-3823(2018)
作者机构:
1. 兰州理工大学电气工程与信息工程学院
2. 西安交通大学电力设备电气绝缘国家重点实验室
3. 甘肃省工业过程先进控制重点实验室
4. 兰州理工大学国家级电气与控制工程实验教学中心
作者简介:
基金信息:
DOI:
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Published Online:31 December 2018,
Published:2018
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ZHANG Hongliang, ZHANG Siyu, LIU Peng, et al. Characteristics of Charge Carrier of Epoxy Resin Based Nanocomposites Filled With Graphene Oxide at High Temperatures[J]. 2018, 44(12): 3814-3823.
DOI:
ZHANG Hongliang, ZHANG Siyu, LIU Peng, et al. Characteristics of Charge Carrier of Epoxy Resin Based Nanocomposites Filled With Graphene Oxide at High Temperatures[J]. 2018, 44(12): 3814-3823.DOI:
Characteristics of Charge Carrier of Epoxy Resin Based Nanocomposites Filled With Graphene Oxide at High Temperatures
We prepared the graphene oxide/epoxy resin nanocomposites by adding graphene oxide into epoxy matrix by the in-situ reduction method. The microstructures and functional groups of the nanocomposites were characterized
and their glass transition temperatures and broadband dielectric spectroscopy were also measured. The microstructure analysis shows that the combination of single-layer graphene oxide(SGO) and epoxy resins(ER) matrix is better than that of multilayered grapheme oxide(MGO) and epoxy resins matrix
which leads to the decrease of glass transition temperature of MGO/ER. The characteristics of charge carriers of composite at various temperatures were analyzed by using the complex conductance and modulus. The results reveal that when the temperature is higher than the glass transition temperature of the composites
the temperature dependence of the DC conductivity is in accordance with the Vogel-Fulcher-Tammann model. The conductance of ER and SGO/ER are mainly generated by the electronic jump conductance
in which the activation energies were 0.58 e V and 0.68 e V
respectively. The DC conduction of MGO/ER is also the electronic jump conduction during 120 ℃~150 ℃
in which activation is 0.98 eV. At above 160 ℃
the ion jump conductance begins to appear in MGO/ER