Influence of Working Coefficient on the Development Characteristics of Initial Electrons in Gas Switch Gap Under DC-withstanding Process

ZHAI Rongxiao; LUO Weixi; QIU Mengtong; CONG Peitian; HUANG Tao; JIANG Xiaofeng

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Influence of Working Coefficient on the Development Characteristics of Initial Electrons in Gas Switch Gap Under DC-withstanding Process

更新时间：2025-12-08

- Influence of Working Coefficient on the Development Characteristics of Initial Electrons in Gas Switch Gap Under DC-withstanding Process
- Vol. 45, Issue 3, Pages: 826-831(2019)
- 作者机构：
  
  西北核技术研究所强脉冲辐射环境模拟与效应国家重点实验室
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published Online：14 March 2019，
  
  Published：2019
- 稿件说明：
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ZHAI Rongxiao, LUO Weixi, QIU Mengtong, et al. Influence of Working Coefficient on the Development Characteristics of Initial Electrons in Gas Switch Gap Under DC-withstanding Process[J]. 2019, 45(3): 826-831.
DOI：

ZHAI Rongxiao, LUO Weixi, QIU Mengtong, et al. Influence of Working Coefficient on the Development Characteristics of Initial Electrons in Gas Switch Gap Under DC-withstanding Process[J]. 2019, 45(3): 826-831. DOI：

摘要

为研究工作系数对直流耐压气体开关间隙中初始电子发展特性的影响

利用皮秒级紫外脉冲激光在开关间隙中产生初始电子

通过测量初始电子在间隙中运动所产生的电流

获得了在间隙距离5 mm、气压范围0.1～0.4MPa、工作系数范围50%～75%条件下

工作系数对初始电子发展特性的影响规律。实验结果表明:初始电子的增殖发展程度随着工作系数的提高而增强

并且存在一个对初始电子产生有效电离作用的工作系数阈值;该阈值随着气压从0.1 MPa增至0.4 MPa略有升高

但基本维持在63%±3%范围附近

且与间隙有效电离系数为零时对应的工作系数相一致;随着工作系数进一步地提高

初始电子将通过多代电子崩过程继续发展。为改善气体开关的直流耐压稳定性

可将开关工作系数设置在有效电离工作系数阈值附近。

Abstract

In order to study the influence of working coefficient on the development characteristics of initial electrons in gas switch gap under DC-withstanding process

a picosecond ultraviolet pulsed laser was used to generate initial electrons in the switch gap. The currents which were generated by the motion and growth of electrons were measured to abtain the influence of working coefficient on the development characteristics of initial electrons under condtitons of the gap distance of 5 mm

the gas pressure from 0.1 to 0.4 MPa

and the working coefficient from 50% to 75%. The experimental results show that the working coefficient has a significant influence on the development of initial electrons

and there is a threshold of working coefficient which produces the effective ionization on electrons. The threshold has a slight growth but remains in the range of 63%±3% with the pressure changing from 0.1 to 0.4 MPa. And the threshold is consistent with the working coefficient when the value of effective ionization coefficient is zero. When the working coefficient increases further

new generations of electron avalanches will emerge in the gap and the discharge process will continue to develop.As a result

it is helpful for improving the DC-withstanding stability of gas switch to set the working coefficient near the effective ionization threshold.

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