Materials surface modification by plasma involves plasma-substrates interaction. The existence of insulation or metal substrate will change the plasma discharge and chemical vapor deposition process. Consequently

we investigated the influences of different substrates（insulation or metal） on the distribution of active particles and ground state OH

and established a relationship between plasma jet discharge process and film characteristics. The results show that the plasma jet exhibits different characteristics near the substrate during film deposition. The optical emission of Ar

N2 and OH with a higher intensity is observed on the PMMA substrate. The OH free redical mainly distributes near the nozzle when the substrate is PMMA

and distributes in the whole space area between the nozzle and the substrate when the substrate is Cu The increase of TEOS content leads to the increase of the number of intermediate products formed by the decomposition of TEOS

which in turn increases the deposition rate of the films. In addition

the field intensity near the substrate varies with different materials. For example

the field intensity near the PMMA substrate remains basically unchanged while near the Cu substrate it increases. By analyzing and comparing the composition of the films

it is found that the films deposited on PMMA surface have higher oxidation degree and less impurities. Furthermore

by comparing and diagnosing the deposition process of thin films on different substrates

it is of great significance to understand and solve the problems in engineering applications.