We review

analyze

and compare the non-quasi static modeling methods for the bipolar base region of high power IGBT chip published in the literature

and classify them into different categories.Because high-power IGBT semiconductor chips have low-doped wide-band areas which can withstand high voltage

the non-quasi static description of the wide base region is always a challenging task for the physical modeling of high-power IGBT. In view of this problem

many researchers proposed a lot of different modeling methods. However

the differences and connections between these methods

as well as the advantages and disadvantages were not summed up in a systematic way. According to the difference in mathematical solutions

the published physics-based models are classified into four classes: the shape function model

the transform model with respect to space

the transform model with respect to time and the lumped-charge model.The mathematical principle of each modeling method is expounded. Besides

based on the differences of mathematical types

the advantages and limitations of each approach are compared and analyzed. The research of this paper can provide theoretical guidance for the research and selection of the non-quasi static modeling method of the wide base region in the physical modeling of high power semiconductor devices.