Design and Implementation of a Carrier Modulation MOSFET Driver Circuit
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Design and Implementation of a Carrier Modulation MOSFET Driver Circuit
Vol. 45, Issue 10, Pages: 3164-3172(2019)
作者机构:
1. 南京理工大学受控电弧智能增材技术工信部重点实验室
2. 昆山华恒焊接股份有限公司
3. 北京航空航天大学机械工程及自动化学院
作者简介:
基金信息:
DOI:
CLC:
Published Online:31 October 2019,
Published:2019
稿件说明:
移动端阅览
FAN Jikang, QI Bojin, LI Xiaopeng, et al. Design and Implementation of a Carrier Modulation MOSFET Driver Circuit[J]. 2019, 45(10): 3164-3172.
DOI:
FAN Jikang, QI Bojin, LI Xiaopeng, et al. Design and Implementation of a Carrier Modulation MOSFET Driver Circuit[J]. 2019, 45(10): 3164-3172.DOI:
Design and Implementation of a Carrier Modulation MOSFET Driver Circuit
摘要
为了改善传统MOSFET隔离驱动电路传输信号频率变化范围小、占空比低、波形失真严重等问题
以MOSFET开关管在脉冲电子束焊接电源中的应用为出发点
采用载波调制与脉冲变压器隔离的方法设计了一种频率、占空比均可大范围调节的MOSFET驱动电路
并对电路的工作原理和参数设计进行了详细分析。设计的MOSFET驱动电路可实现60 kV的高电压隔离
输出驱动信号上升时间为0.3μs
下降时间为1.8μs
传输的PWM脉冲信号不受占空比范围限制
可传输占空比为0~100%的PWM脉冲信号。搭建测试平台对驱动电路进行了测试
结果表明该驱动电路能够满足0~20k Hz脉冲电子束焊接电源脉冲控制信号传输与隔离的需求
为MOSFET功率开关管在脉冲电子束焊机等高电压大功率领域的广泛应用奠定了技术基础。
Abstract
Conventional MOSFET isolation driving circuit has problems of small variation frequency range
low duty ratio and severe waveform distortion. In this paper
based on the application of MOSFET switching tube in pulsed electron beam welding power source
a MOSFET driving circuit with wide frequency and duty cycle is designed to overcome the defects of the traditional transformer isolation drive circuit. In the circuit
a carrier modulation method is adopted to transmit signals and a pulse transformer is adopted to achieve voltage isolation. The operating principle and parameter design of driving circuit are analyzed in detail. The completed driving circuit can isolate up to 60 kV high voltage from the control circuit. The rising time and falling time of driving signal are respectively 0.3 μs and 1.8 μs. Moreover
the waveform quality of driving signal is free from the influence of duty ratio
and the pulse signal with 0~100% duty ratio can transmit in the designed driving circuit. The driving circuit can meet the requirements of transmission of 0~20 kHz PWM signal and isolation of pulsed electron beam welding power supply
which lays a foundation for the wide application of MOSFET power switch tubes in high voltage and high power fields.