Characteristics and Suppression of PETT Oscillation in High-voltage High-power Press Pack IGBT

TANG Xinling; ZHANG Bijun; ZHANG Yu; WANG Liang; ZHANG Peng

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Characteristics and Suppression of PETT Oscillation in High-voltage High-power Press Pack IGBT

更新时间：2025-12-08

- Characteristics and Suppression of PETT Oscillation in High-voltage High-power Press Pack IGBT
- Vol. 46, Issue 3, Pages: 1052-1059(2020)
- 作者机构：
  
  先进输电技术国家重点实验室(全球能源互联网研究院有限公司)
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published Online：31 March 2020，
  
  Published：2020
- 稿件说明：
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TANG Xinling, ZHANG Bijun, ZHANG Yu, et al. Characteristics and Suppression of PETT Oscillation in High-voltage High-power Press Pack IGBT[J]. 2020, 46(3): 1052-1059.
DOI：

TANG Xinling, ZHANG Bijun, ZHANG Yu, et al. Characteristics and Suppression of PETT Oscillation in High-voltage High-power Press Pack IGBT[J]. 2020, 46(3): 1052-1059. DOI：

摘要

高压大功率压接型IGBT器件在关断拖尾阶段产生高频等离子体抽取渡越时间（plasma extraction transit time

PETT）振荡

对驱动电路和环境产生严重的电磁干扰

抑制PETT振荡对于研制大功率压接型IGBT器件至关重要。基于IGBT关断拖尾阶段空穴注入空间电荷区引起的空间电荷效应

分析了空间电荷区的大信号特性以及PETT振荡产生的机理。其次

搭建了压接型IGBT器件开关特性测试平台

首次研究了单芯片PETT振荡特性、驱动回路参数对PETT振荡的影响以及PETT振荡的电磁干扰特性。最后

讨论了压接型IGBT器件PETT振荡抑制措施

提出了一种可以降低封装工艺复杂度、降低芯片电气应力的方法

该方法非常适合于高压大功率的压接型IGBT器件。

Abstract

The high-voltage high-power press pack IGBT generates a high-frequency plasma extraction transit time（PETT） oscillation during the turn-off tail phase

causing severe electromagnetic interference to the driving circuit and the environment

thus it is critical to suppress the PETT oscillation when developing high-power press pack IGBT. In this paper

based on the space charge effect caused by the hole injection in the IGBT turn-off tail phase

the large signal characteristics of the space charge region and the mechanism of PETT oscillation were analyzed. Secondly

a test platform for the switching characteristics of the press pack IGBT device is built. The effects of the single-chip PETT oscillation characteristics and the driving loop parameters on the PETT oscillation and the electromagnetic interference characteristics of the PETT oscillation are studied for the first time. Finally

the PETT oscillation suppression method of the press pack IGBT device is analyzed

and a method for reducing the complexity of the packaging process and reducing the electrical stress of the chip was proposed

which is very suitable for high-power press pack IGBTs.

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