The transient model of IGBT is of great significance for the analysis and design of power electronic systems. At present

considering the accuracy and simulation efficiency

both physical models and existing behavioral models are difficult to meet the requirements of complex circuit simulation. Aiming at this problem

based on the physical mechanism of IGBT turn-on and turn-off transients

the switching process is segmented and characterized. An IGBT piecewise transient model which can be applied to complex circuit simulation and can reflect the temperature influence is proposed and implemented in the simlink software. Finally

the validity of the model is verified by comparison with physical models and experimental data. The comparison results show that the proposed model can accurately characterize the transient characteristics of IGBT switching under different voltage

current and temperature conditions

and can be used for complex circuit simulation with high simulation efficiency. This model provides important support for multi-time scale modeling and simulation of devices.