Effect of Alumina Doping Content on VFTO Tolerance of Epoxy Resin Cone-type Insulators

HE Shun; ZHENG Yigu; LIN Chuanjie; SUN Zhaochen; TU Youping; HE Jinliang

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Effect of Alumina Doping Content on VFTO Tolerance of Epoxy Resin Cone-type Insulators

更新时间：2025-12-08

- Effect of Alumina Doping Content on VFTO Tolerance of Epoxy Resin Cone-type Insulators
- Vol. 46, Issue 11, Pages: 4006-4013(2020)
- 作者机构：
  
  1. 云南电网电力科学研究院
  2. 清华大学电机工程与应用电子技术系电力系统及大型发电设备安全控制与仿真国家重点实验室
  3. 云南电网有限责任公司大理供电局
  4. 华北电力大学高电压技术与电磁兼容北京市重点实验室
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published Online：30 November 2020，
  
  Published：2020
- 稿件说明：
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HE Shun, ZHENG Yigu, LIN Chuanjie, et al. Effect of Alumina Doping Content on VFTO Tolerance of Epoxy Resin Cone-type Insulators[J]. 2020, 46(11): 4006-4013.
DOI：

HE Shun, ZHENG Yigu, LIN Chuanjie, et al. Effect of Alumina Doping Content on VFTO Tolerance of Epoxy Resin Cone-type Insulators[J]. 2020, 46(11): 4006-4013. DOI：

摘要

环氧树脂在高压绝缘领域广泛应用

常用于制作气体绝缘金属封闭式组合电器（gas insulated switchgear

GIS）中的盆式或支柱绝缘子

该类绝缘子在交流电压下运行相对稳定。然而

由于GIS中存在着隔离开关操作

产生的特快速暂态过电压（very fast transient over-voltage

VFTO）引发的绝缘子沿面闪络严重威胁着GIS的运行稳定性

有必要对该类现象进行深入研究。为此利用多种测试手段探究了环氧树脂微米级氧化铝颗粒掺杂含量对其气固界面特性的影响

并通过试验与仿真计算研究了氧化铝掺杂含量对于绝缘子VFTO耐受能力的影响。试验结果表明随着氧化铝颗粒掺杂含量的增加

环氧绝缘材料的表面颗粒数密度、电致发光稳态光子数、表面电导率、体电导率、介电常数、损耗角正切以及局部放电量随之增加

水接触角随之降低。试验和仿真结果相互验证

表明降低氧化铝颗粒的掺杂含量有助于降低盆式绝缘子表面的VFTO峰值

从而提升环氧树脂盆式绝缘子的VFTO耐受能力。

Abstract

Epoxy resin

widely used in the high voltage insulation

is often utilized to make cone-type or pillar insulators in gas insulated switchgear（GIS）

which operate stable under common AC voltage. However

due to the operation of disconnecting switch operation in GIS

very fast transient over-voltage（VFTO）-induced flashover along the insulator surface seriously threatens the stability of GIS. It is necessary to study this phenomenon in depth. In this paper

the influence of Al

doping content on gas-solid interface characteristics of epoxy resin was investigated by various test methods

and the effect of Al

doping content on VFTO resistance of insulators was studied by simulation. The e

xperimental results show that

as the Al

doping content increases

the surface particle density

the percentage of Al atoms on the surface

the steady photon number of electroluminescence

surface conductivity

bulk conductivity

dielectric constant

tangent of loss angle and partial discharge of epoxy insulating materials will increase

whereas

the water contact angle and the AC flashover voltage will decrease. The experimental results and simulation results show that reducing the doping content of Al

is effective to improving the VFTO tolerance of epoxy resin insulators.

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