Review of Deterioration Mechanism Analysis and Condition Monitoring Technology for High Voltage IGBT

ZHU Lingyu; ZHAN Cao; LIU Chenshuo; DAI Jiangang; JI Shengchang

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Review of Deterioration Mechanism Analysis and Condition Monitoring Technology for High Voltage IGBT

更新时间：2025-12-08

- Review of Deterioration Mechanism Analysis and Condition Monitoring Technology for High Voltage IGBT
- Vol. 47, Issue 3, Pages: 903-916(2021)
- 作者机构：
  
  西安交通大学电力设备电气绝缘国家重点实验室
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published Online：31 March 2021，
  
  Published：2021
- 稿件说明：
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ZHU Lingyu, ZHAN Cao, LIU Chenshuo, et al. Review of Deterioration Mechanism Analysis and Condition Monitoring Technology for High Voltage IGBT[J]. 2021, 47(3): 903-916.
DOI：

ZHU Lingyu, ZHAN Cao, LIU Chenshuo, et al. Review of Deterioration Mechanism Analysis and Condition Monitoring Technology for High Voltage IGBT[J]. 2021, 47(3): 903-916. DOI：

摘要

基于模块化多电平换流器（MMC）的柔性直流输电（VSC-HVDC）技术在电力传输等领域得到广泛应用。高压IGBT的劣化机理分析及状态监测技术对于保证MMC的可靠性具有重要意义。高压IGBT有焊接型和压接型两种不同的封装形式。目前焊接型IGBT的劣化机理研究综述较多

但是缺乏压接型IGBT的相关总结。因此

首先总结了压接型IGBT的状态劣化形式和机理。然后从电学、热学和绝缘参量的角度分析了近年来国内外高压IGBT状态监测领域的研究现状

特别补充了关于压接型IGBT的有关内容。最后

基于对国内外研究中存在问题的分析

展望了MMC用高压IGBT状态监测技术的发展趋势和值得深入研究的方向。对于MMC用高压IGBT状态监测技术研究具有一定意义。

Abstract

Modular multilevel converter（MMC） based voltage-sourced-converter high-voltage-direct-current（VSCHVDC） technology has been widely utilized in power transmission field. Deterioration mechanism analysis and condition monitoring technology of high voltage IGBT is of significance to maintain the reliability of MMC. The current packaging technologies of high voltage IGBT contain bond-wire and press-pack. The review on the failure mechanism of bond-wire IGBT is sufficient compared to press-pack IGBT（PPI）. Therefore

in this paper

the condition deterioration modes and mechanism of PPI are summarized firstly. Secondly

the domestic and foreign research status of condition monitoring methods of high voltage IGBT is summarized based on electrical

thermal and insulation parameters in recent years

especially for high voltage PPI. Finally

according to the problem of state-of-the-art

the development trend and prospective research interests in the area of condition monitoring method of high voltage IGBT used in MMC are proposed. This paper is meaningful for the condition monitoring of high voltage IGBT used in MMC.

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Related Author

ZHENG Linzi

YAN Xinyi

JI Shengchang

ZHU Lingyu

PAN Jianyu

LIN Wenqi

XIAO Kai

ZOU Yansheng

Related Institution

电工材料电气绝缘全国重点实验室(西安交通大学)

CSG EHV Electric Power Research Institute

State Key Laboratory of Power Transmission Equipment Technology (School of Electrical Engineering, Chongqing University)

直流系统工程装备研究中心(大连海事大学)

School of Electrical Engineering, Wuhan University

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