Abstract: To prevent the shoot-through of the phase leg from happening in the operation of the inverter,the necessary dead-time should be inserted into the driving signals of the devices. However,the dead-time could cause issues such as fundamental voltage loss and distortion in the inverter.Especially when the SiC MOSFET is used as the switching device, the high switching frequency makes the waveform distortion more serious,therefore the traditional dead-time compensation strategy applied to the Si IGBT inverter is inadequate and inapplicable anymore. To this end,this paper proposes a novel dead-time compensation strategy for piecewise modulation of the SiC MOSFET inverters,which is based on the traditional dead-time elimination strategy. This strategy derives the current ripple value at the zero-crossing point through the established prediction model,and divides the current into zerocrossing area and non-zero-crossing area with the derived value.When the output current is in the non-zero-crossing region,only the effective devices are switched by each phase of the bridge arm and the complementary devices are in off-state,which can increase the amplitude of the fundamental voltage.When the current is in the zero-crossing region,the equivalent pulse compensation time is calculated to compensate for the errors caused by factors such as dead time and parasitic capacitance,which can reduce waveform distortion. Finally,the simulation and experimental results show that compared with the traditional dead-time elimination strategy, the proposed compensation strategy can reduce the low-subharmonic content,improve the output waveform quality and reduce the THD of the output voltage by 1.63%.