Abstract: As a crucial component of the power information system, data storage is particular important for its high reliability, fast read-write speed, and strong compatibility. Non-volatile memories (NVM) based on the spintronic properties of multiferroic magnetoelectric materials, which have the advantages of fast reading and writing speed and secure data storage, are expected to be used in future power devices to store device configuration information and real-time data caching. However, the polarization effect of ME materials polarized by DC voltage is insufficient, resulting in a degradation in the energy storage efficiency of NVM. AC voltage can more effectively drive the directional arrangement of dipoles inside the material and enhance the charge injection and storage effect, which is an effective method to improve the storage efficiency of the memory. Herein, the effect of various voltage waveforms on the ME performance of P(VDF-TrFE) ME film is investigated by corona polarization regulation technique. The obtained results suggest that the ME voltage coefficient could reach 37.59 mV/(cm·Oe) as the voltage waveform is triangular wave. It is worth noting that compared with DC and AC signals, the coefficient under triangular wave exhibits an increase of 19.5% and 9.7%, respectively, which effectively improves the macroscopic ME properties of ME materials. The advancement of data storage provides technical support for energy-saving and capacity expansion in data centers, and smart grid equipment storage. It enables efficient local storage and reduces operating costs and energy consumption.