Abstract: Silicon carbide MOSFETs have gradually been used in industry due to their excellent properties such as high voltage class, high temperature, and high frequency. However, the current unbalance of parallel SiC MOSFETs limits the performance of SiC MOSFETs and increases the risk of failure. In order to give full play to the performance advantages of SiC MOSFET, this paper expounds the influencing factors of current unbalance from three aspects, namely, chip parameters, power loop parameters, and drive loop parameters, and summarizes the research results of suppressing parallel current unbalance at home and abroad. The current unbalance suppression method is comprehensively compared and analyzed from four dimensions as follows: current balance types, expansion, integration, and cost. Finally, according to the existing deficiencies and challenges, this paper put forward the prospects in the current unbalance suppression method of SiC MOSFET.