王希平, 丁祥宽, 姚芳, 唐圣学, 李志刚. IGBT模块失效机理及状态监测研究综述[J]. 中国电力, 2019, 52(9): 61-72. DOI: 10.11930/j.issn.1004-9649.201907034
引用本文: 王希平, 丁祥宽, 姚芳, 唐圣学, 李志刚. IGBT模块失效机理及状态监测研究综述[J]. 中国电力, 2019, 52(9): 61-72. DOI: 10.11930/j.issn.1004-9649.201907034
Xiping WANG, Xiangkuan DING, Fang YAO, Shengxue TANG, Zhigang LI. Review of Failure Mechanism and State Monitoring Technology for IGBT Modules[J]. Electric Power, 2019, 52(9): 61-72. DOI: 10.11930/j.issn.1004-9649.201907034
Citation: Xiping WANG, Xiangkuan DING, Fang YAO, Shengxue TANG, Zhigang LI. Review of Failure Mechanism and State Monitoring Technology for IGBT Modules[J]. Electric Power, 2019, 52(9): 61-72. DOI: 10.11930/j.issn.1004-9649.201907034

IGBT模块失效机理及状态监测研究综述

Review of Failure Mechanism and State Monitoring Technology for IGBT Modules

  • 摘要: 随着电力电子系统性能要求的不断提高,绝缘栅双极晶体管(insulated gate bipolar transistor,IGBT)模块不仅要拥有高功率密度,还要具有良好的热−机械性能,以提高其可靠性。首先介绍了IGBT模块的主要失效模式,对封装中键合线和焊料层失效机理进行了详细阐述,重点介绍了IGBT模块健康状态监测,分别对结温、键合线与焊料层健康状态监测及其量化评估研究进展进行了详细分析。最后,对降低热−机械应力以提高整机可靠性设计和运行工况下在线监测研究的发展前景进行了展望。

     

    Abstract: With the continuous increasing of the performance requirements for power electronic systems, the power device IGBT modules must not only have high power density, but also have good thermo-mechanical properties to improve their reliability. In this paper, the failure mechanism of IGBT modules is introduced firstly, and the failure mechanism of bonding wires and solder layers is described in detail. The health state monitoring of IGBT modules is mainly introduced, and the research progress of health monitoring about junction temperature, bonding wire and solder layer and their quantitative evaluations are analyzed in detail. Finally, from reducing the thermal-mechanical stress for improving the reliability design of the package and the on-line monitoring development under the operating conditions, the prospects are presented.

     

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