Abstract: With the development of Insulated Gate Bipolar Transistor (IGBT) to high voltage and high power, the problem of device insulation packaging becomes more and more import ant. Because common linear silicone gel will appear yellowing, cracking and other phenomena after long-term use in high temperature environment, which will lead to the decrease of working reliability of IGBT module and greatly reduce its working life, it is very urgent and critical to find a kind of silicone insulating and sealing material with better performance. It is also extremely important for the current and future development of IGBT. This paper first introduced the thermal stability mechanism of silicone gel, then discussed the current research progress on high temperature resistant modified silicone gel, explored the feasibility of high temperature resistant modified silicone gel scheme, and prospected its application prospect. This paper will provide some ideas for the research and development of high temperature resistant silicone gel.